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SiC is mainly used to achieve small weight and lightweight drive systems such as electric vehicle inverters. The advantages of SiC devices over Si devices are lower energy loss, easier miniaturization and higher temperature resistance. SiC is suitable for high pressure field, GaN is more suitable for low pressure and high frequency field.
View MoreIn the entire semiconductor industry chain, semiconductor materials are in the upstream, the middle reaches are all kinds of semiconductor components, and the downstream applications include consumer electronics, communications, new energy, power, transportation and other industries. In recent years, with the second and third generation compound semiconductors achieving more extensive applications with their unique physical properties, their upstream substrate materials gallium arsenide, silicon
View MoreGallium arsenide is a better material than silicon, electrons move through gallium arsenide five times faster than silicon, and gallium arsenide is less sensitive to ambient temperature than silicon. But microchips and solar cells are made of silicon, and because silicon is an abundant element, it costs less to make electronics and photovoltaic products from silicon than gallium arsenide. Now, researchers at the Massachusetts Institute of Technology (MIT) have found a way to replicate solar cell
View MoreA novel single wafer cleaning technology to meet the needs of compound semiconductor manufacturing: removing photoresist and post-etching residues while maintaining compatibility with a variety of compound semiconductor materials, exposed metals, and dielectric layers.后残留物,同时保持与各种化合物半导体材料、暴露金属和介电层的兼容性。
View MoreSemiconductor materials can be divided into two categories of elemental semiconductor and compound semiconductor, the former such as silicon (Si), germanium (Ge) and other semiconductors, the latter for gallium arsenide (GaAs), gallium nitride (GaN), silicon carbide (SiC) and other compounds formed. In the past, the semiconductor has mainly experienced three generations of changes, gallium arsenide (GaAs), gallium nitride (GaN) and silicon carbide (SiC) semiconductors as representatives of the s
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